Method of chemical mechanical polishing with high throughput and low dishing
US6780773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.