Laser thermal oxidation to form ultra-thin gate oxide
US6780789B1 · kind B1 · utility
19Cited by
4References
7Claims
0Family size
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Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ultra-thin gate oxides are formed by exposing the upper surface of a substrate to a pulsed laser light beam in an atmosphere containing oxygen. Embodiments include exposing a silicon substrate to a pulsed laser light beam at a radiant fluence of 0.1 to 0.8 joules/cm2 for 1 to 10 nanoseconds to form a gate oxide layer having a thickness of 3 å to 8 å, e.g., 3 å to 5 å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.