Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6782337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2001 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jun 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and a presence of defects. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.