Polymer memory device formed in via opening

US6787458B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Nicholas H. Tripsas · San Jose, US
• Matthew S. Buynoski · Palo Alto, US
• Suzette K. Pangrle · Cupertino, US
• Uzodinma Okoroanyanwu · Mountain View, US
• Angela T. Hui · Fremont, US
• Christopher F. Lyons · Fremont, US
• Ramkumar Subramanian · Sunnyvale, US
• Sergey Lopatin · Santa Clara, US
• Minh Van Ngo · Fremont, US
• Ashok M. Khathuria · San Jose, US
• Mark S. Chang · Los Altos, US
• Patrick K. Cheung · Sunnyvale, US
• Jane V. Oglesby · San Jose, US

Key dates

• Filing date: Jul 7, 2003
• Grant date: Sep 7, 2004
• Expiry date: Jul 7, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.