Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation
US6794288B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2003 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | May 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for selective deposition of Co—W—P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co—W—P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.