Methods of forming integrated circuitry, semiconductor processing methods, and processing method of forming MRAM circuitry
US6797628B2 · kind B2 · utility
3Cited by
14References
65Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming integrated circuitry includes chemical vapor depositing a silicon carbide comprising layer over a substrate at a temperature of no greater than 500° C. Plasma etching is conducted through at least a portion of the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen. Semiconductor processing methods include the above in fabrication of contact openings and in fabrication of MRAM circuitry. Semiconductor processing methods also include fabrication of contact openings using resist and removing silicon carbide comprising material and resist in a common plasma etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.