Use of high-K dielectric material in modified ONO structure for semiconductor devices
US6803272B1 · kind B1 · utility
108Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 22, 2003 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT™ two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.