Reduced dopant deactivation of source/drain extensions using laser thermal annealing
US6812106B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Nov 2, 2004 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dopant deactivation of source/drain extensions during silicidation is reduced by forming deep source/drain regions using a disposable dummy gate as a mask, forming metal silicide layers on the deep source/drain regions, removing the dummy gate and then forming the source/drain extensions using laser thermal annealing. Embodiments include angular ion implantation, after removing the dummy gate, to form spaced apart pre-amorphized regions, ion implanting to form source/drain extension implants extending deeper into the substrate than the pre-amorphized regions, and then laser thermal annealing to activate the source/drain extensions having a higher impurity concentration at the main surface of the substrate than deeper into the substrate. Subsequent processing includes forming sidewall spacers, a gate dielectric layer and then the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.