Field effect controlled semiconductor component

US6812524B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Ahlers · Hersbruck, DE
• Jens-Peer Stengl · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE
• Hans Weber · Villach, AT
• Gerald Deboy · Klagenfurt, AT
• Helmut Strack · Hersbruck, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Dec 11, 2001
• Grant date: Nov 2, 2004
• Expiry date: Dec 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.