Method of manufacturing a semiconductor integrated circuit device
US6821854B2 · kind B2 · utility
5Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Aug 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
Abstract
A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.