Method of assessing lateral dopant and/or charge carrier profiles

US6822430B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Thomas Feudel · Radebeul, DE
• Manfred Horstmann · Dresden, DE
• Rolf Stephan · Dresden, DE

Key dates

• Filing date: Jun 24, 2003
• Grant date: Nov 23, 2004
• Expiry date: Jun 24, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/34
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A cost-efficient and reliable method for assessing lateral dopant profiles includes the estimation of a reference profile formed below a gate structure of a transistor device. The overlap capacitance is then determined for at least two different overlaps, created by different spacer widths, and the lateral extension of a dopant profile to be measured, is estimated on the basis of a relationship between overlap capacitance and spacer width for the reference dopant profile.