Method of controlling program threshold voltage distribution of a dual cell memory device
US6822909B1 · kind B1 · utility
16Cited by
13References
36Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a dual cell memory device having a first charge storing cell and a second charge storing cell. The method can include applying an initial program pulse to the memory device; comparing the threshold voltage of the memory device with a verify threshold voltage; and if the threshold voltage of the memory device is less than the verify threshold voltage, applying a second program pulse to the memory device during which at least one condition of the second program pulse is modified from the initial program pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.