Post silicide laser thermal annealing to avoid dopant deactivation
US6825115B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dopant deactivation, particularly at the Si/silicide interface, is avoided by forming deep source/drain implants after forming silicide layers on the substrate and activating the source/drain regions by laser thermal annealing. Embodiments include forming source/drain extensions, forming metal silicide layers on the substrate surface and gate electrode, forming preamorphized regions under the metal silicide layers in the substrate, ion implanting to form deep source/drain implants overlapping the preamorphized regions and extending deeper into the substrate then the preamorphized regions, and laser thermal annealing to activate the deep source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.