Ion beam incident angle detector for ion implant systems
US6828572B2 · kind B2 · utility
16Cited by
17References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Apr 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.