Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processes

US6835417B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Annette Saenger · Dresden, DE
• Bernhard Sell · Dresden, DE
• Harald Seidl · Brandenburg an der Havel, DE
• Thomas Hecht · Dresden, DE
• Martin Gutsche · Dorfen, DE

Key dates

• Filing date: Feb 27, 2003
• Grant date: Dec 28, 2004
• Expiry date: Jun 27, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/481
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The ALD process chamber has heating radiation sources and the process sequence includes rapid temperature changes on a substrate surface of a substrate arranged in the ALD process chamber. The temperature changes are controlled and the ALD and CVD processes are optimized by in situ temperature steps, for example in order to produce nanolaminates.