Patent · US Expired

Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor device

US6846708B2 · kind B2 · utility

6Cited by

3References

28Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Thomas Feudel · Radebeul, DE
Manfred Horstmann · Dresden, DE
Rolf Stephan · Dresden, DE

Key dates

Filing date	Jun 23, 2003
Grant date	Jan 25, 2005
Priority date	—
Expiry date	Jul 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/26513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An implanting process for amorphizing a crystalline substrate is proposed according to the present invention. In particular, according to the present invention, amorphous regions are formed in a substrate by exposing the substrate to an ion beam which is kept at a tilt angle between 10 and 80 degrees with respect to the surface of the substrate. Accordingly, ion channeling during subsequent implanting processes is prevented not only in the vertical direction but also in the horizontal direction so that doped regions exhibiting optimum doping profile tailoring may be realized.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.