MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer
US6849467B1 · kind B1 · utility
0Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2003 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Jul 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an H2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiOx thin film, where 0<x<2, on a damascene structure; plasma space etching of the Ti or TiOx thin film to form a TiOx sidewall; annealing the TiOx side wall thin film form a TiO2 thin film; depositing a layer of ferroelectric material; and metallizing the structure to form a FeRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.