Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device
US6849535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2002 |
| Grant date | Feb 1, 2005 |
| Priority date | — |
| Expiry date | Jun 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate; a first insulating film overlying a surface of the semiconductor substrate, an upper surface of the first insulating film being nitrided; a first copper-embedded interconnection embedded in the first insulating film, and which first copper-embedded interconnection contains copper as a main component; a copper nitride film overlying an upper surface of the first copper-embedded interconnection; a cap insulating film overlying an upper surface of the first insulating film and an upper surface of the copper nitride film; and a second insulting film overlying the cap insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.