Method for controlling galvanic corrosion effects on a single-wafer cleaning system
US6858091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2001 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Dec 12, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with spraying a cleaning chemistry containing corrosion inhibitors onto a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.