Patent · US Expired

Bond pad structure comprising tungsten or tungsten compound layer on top of metallization level

US6866943B2 · kind B2 · utility

6Cited by

19References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerald Friese · Munich, DE
Werner Robl · Regensburg, DE
Hans-Joachim Barth · Munich, DE
Axel Brintzinger · Fishkill, US

Key dates

Filing date	Apr 30, 2002
Grant date	Mar 15, 2005
Priority date	—
Expiry date	Jul 27, 2022

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/1284
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A bond pad structure formed over a predetermined area of an IC substrate comprising quickly and easily removable redundancy and passivation layers upon lithography and plasma etching in a plasma containing Cl2, the bond structure comprises: a liner or lower metal layer formed on a predetermined area of the IC substrate; an aluminum-based metal layer formed on the liner layer as the last metal layer for bond purposes; a tungsten based redundancy layer formed on top of the aluminum-based last metal layer; and a passivation layer formed over the IC substrate and on the tungsten based redundancy layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.