Method of manufacturing a semiconductor memory with deuterated materials
US6884681B1 · kind B1 · utility
31Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Apr 26, 2005 |
| Priority date | — |
| Expiry date | Sep 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
A method for manufacturing a MirrorBit® Flash memory includes providing a semiconductor substrate and successively depositing a first insulating layer, a charge-trapping layer, and a second insulating layer. First and second bitlines are implanted and wordlines are formed before completing the memory. Spacers are formed between the wordlines and an inter-layer dielectric layer is formed over the wordlines. One or more of the second insulating layer, wordlines, spacers, and inter-layer dielectric layers are deuterated, replacing hydrogen bonds with deuterium, thus improving data retention and substantially reducing charge loss.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.