Sensing of memory integrated circuits
US6903959B2 · kind B2 · utility
1Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Jun 7, 2005 |
| Priority date | — |
| Expiry date | Jul 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory IC having improved sensing during reads is disclosed. The IC includes the use of first and second reference voltages for sensing to compensate for asymmetry that exists between cells on bitline true and bitline complement. The first reference voltage is used for sensing a cell on bitline true while the second reference voltage is used for sensing a cell on bitline complement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.