Feedback control of plasma-enhanced chemical vapor deposition processes
US6913938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2002 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Jul 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method of film deposition in a chemical vapor deposition (CVD) process includes (a) providing a model for CVD deposition of a film that defines a plurality of regions on a wafer and identifies one or more film properties for at least two regions of the wafer and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of the one or more film properties for the deposited film of step (b) for each of the at least two regions of the wafer and determining a film property; (d) calculating an updated deposition model based upon the film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control film properties other than film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.