Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitor

US6916704B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Martin Gutsche · Dorfen, DE
• Bernhard Sell · Dresden, DE
• Annette Sanger · Dresden, DE
• Harald Seidl · Brandenburg an der Havel, DE

Key dates

• Filing date: Jun 12, 2002
• Grant date: Jul 12, 2005
• Expiry date: Aug 2, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665

Abstract

An upper capacitor electrode of a trench capacitor of a DRAM memory cell is formed at least in part as a result of a plurality of metal-containing layers being deposited one on top of another and in each case being conditioned after they have been deposited. In this way, the internal stress of the electrode layer can be reduced, and therefore a breaking strength and a resistance to leakage currents of the trench capacitor can be increased.