Method and system for realtime CD microloading control
US6924088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Aug 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for processing a semiconductor wafer is provided for reducing CD microloading variation. OCD metrology is used to inspect a wafer to determine pre-etch CD microloading, by measuring the CD of dense and isolated photoresist lines. Other parameters can also be measured or otherwise determined, such as sidewall profile, photoresist layer thickness, underlying layer thickness, photoresist pattern density, open area, etc. The inspection results are fed forward to the etcher to determine process parameters, such as resist trim time and/or etch conditions, thereby achieving the desired post-etch CD microloading. In certain embodiments, the CD and profile measurements, trim, etch processing and post-etch cleaning are performed at a single module in a controlled environment. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.