Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device

US6924216B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Thomas Feudel · Radebeul, DE
• Manfred Horstmann · Dresden, DE
• Rolf Stephan · Dresden, DE

Key dates

• Filing date: May 19, 2003
• Grant date: Aug 2, 2005
• Expiry date: May 19, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming the active regions of field effect transistors is proposed. According to the proposed method, shallow implanting profiles for both the halo structures and the source and drain regions can be obtained by carrying out a two-step damaging and amorphizing implantation process. During a first step, the substrate is damaged during a first light ion implantation step and subsequently substantially fully amorphized during a second heavy ion implantation step.