Method of cleaning CVD device and cleaning device therefor
US6935351B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 18, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Nov 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A cleaning method for CVD apparatus wherein by-products such as SiO2 and Si3N4 adhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.