Selective deposition of a barrier layer on a dielectric material
US6939801B2 · kind B2 · utility
54Cited by
36References
43Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76844
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.