Apparatus and method for detecting photon emissions from transistors
US6943572B2 · kind B2 · utility
10Cited by
58References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 5, 2003 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Dec 5, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves processing of integrated circuit computer aided design data to identify transistors within the CAD data. The analysis may further involve the use of Boolean operators to process the CAD data to particularly identify, such as through a channel, the location of the NMOS and PMOS gates, the location of the drain and source, or some combination of the location of the gate and drain or source to particularly identify the pinch-off region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.