Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor

US6972267B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wei Cao · Milpitas, US
• Hua Chung · San Jose, US
• Vincent Ku · San Jose, US
• Ling Chen · Sunnyvale, US

Key dates

• Filing date: Mar 4, 2003
• Grant date: Dec 6, 2005
• Expiry date: Nov 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28562
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.