Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US6974720B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.