Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
US6982230B2 · kind B2 · utility
65Cited by
9References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Nov 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.