Laser thermal annealing methods for flash memory devices
US7001814B1 · kind B1 · utility
13Cited by
7References
27Claims
0Family size
Assignee
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Key dates
| Filing date | May 16, 2003 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | Aug 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an ONO (oxide-nitride-oxide) insulating layer for a flash memory device, the insulating layer including a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.