Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

US7005303B2 · kind B2 · utility

Assignee

• ADVANCED TECHNOLOGY & MATERIALS CO., LTD. · US

Inventors

• Frank Hintermaier · Hersbruck, DE
• Christine Dehm · Koblenzer Straße, DE
• Wolfgang Hoenlein · Unterhaching, DE
• Peter C. Van Buskirk · Newtown, US
• Jeffrey F. Roeder · Brookfield, US
• Bryan C. Hendrix · Danbury, US
• Thomas H. Baum · New Fairfield, US
• Debra A. Desrochers · Brookfield, US

Key dates

• Filing date: Apr 30, 2004
• Grant date: Feb 28, 2006
• Expiry date: Apr 30, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02197
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.