Post treatment of low k dielectric films
US7018941B2 · kind B2 · utility
648Cited by
19References
20Claims
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Key dates
| Filing date | Apr 21, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.