Method and system for providing common read and write word lines for a segmented word line MRAM array
US7027324B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.