Circuits with a trench capacitor having micro-roughened semiconductor surfaces
US7084451B2 · kind B2 · utility
57Cited by
123References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/711
Abstract
A method for forming a trench capacitor. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.