Strained silicon CMOS on hybrid crystal orientations
US7087965B2 · kind B2 · utility
84Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | May 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.