Method for controlling accuracy and repeatability of an etch process
US7094613B2 · kind B2 · utility
21Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2003 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Apr 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to a method for etching in a processing platform (e.g. a cluster tool) wherein robust pre-etch and post-etch data may be obtained in-situ. The method includes the steps of obtaining pre-etched critical dimension (CD) measurements of a feature on a substrate, etching the feature; treating the etched substrate to reduce and/or remove sidewall polymers deposited on the feature during etching, and obtaining post-etched CD measurements. The CD measurements may be utilized to adjust the etch process to improved the accuracy and repeatability of device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.