Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer

US7102232B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Stefanie Chiras · Peekskill, US
• Timothy J. Dalton · Ridgefield, US
• James J. Demarest · Rensselaer, US
• Derren N. Dunn · Hopewell Junction, US
• Chester T. Dziobkowski · Hopewell Junction, US
• Philip L. Flaitz · Newburgh, US
• Michael Lane · Somers, US
• James Lloyd · Natick, US
• Darryl D. Restaino · Modena, US
• Thomas M. Shaw · Peekskill, US
• Yun-Yu Wang · Poughquag, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Apr 19, 2004
• Grant date: Sep 5, 2006
• Expiry date: Dec 13, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiOx— or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.