Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7109098B1 · kind B1 · utility
521Cited by
129References
15Claims
0Family size
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Key dates
| Filing date | May 17, 2005 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | May 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.