Method of fabricating contact pad for magnetic random access memory
US7122386B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2005 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Sep 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
A method of forming a Cu—Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiNx layer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiNx layer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiNx layer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiNx layer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiNx layers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.