Mixed orientation and mixed material semiconductor-on-insulator wafer
US7125785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Nov 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates, generally, to a semiconductor substrate with a planarized surface comprising mixed single-crystal orientation regions and/or mixed single-crystal semiconductor material regions, where each region is electrically isolated. In accordance with one embodiment of the disclosure CMOS devices on SOI regions are manufactured on semiconductors having different orientations. According to another embodiment, an SOI device is contemplated as having a plurality of semiconductor regions having at least one of a different semiconductor material, crystalline lattice constant or lattice strain. Methods and processes for fabricating the different embodiments of the invention is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.