MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7132618B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2003 |
| Grant date | Nov 7, 2006 |
| Priority date | — |
| Expiry date | Feb 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.