Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode
US7138040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2002 |
| Grant date | Nov 21, 2006 |
| Priority date | — |
| Expiry date | Jan 31, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D17/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 μm when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 μm when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.