Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7160739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2001 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Mar 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d)calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.