Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors
US7166544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Sep 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.