Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

US7173306B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Ralf Henninger · Birkenfeld, DE
• Frank Pfirsch · Birkenfeld, DE
• Markus Zundel · Egmating, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Aug 27, 2004
• Grant date: Feb 6, 2007
• Expiry date: Aug 27, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: