Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate material

US7176514B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Hecht · Dresden, DE
• Albert Birner · Regensburg, DE
• Harald Seidl · Brandenburg an der Havel, DE
• Uwe Schroder · Dresden, DE
• Stefan Jakschik · Kessel-Lo, BE
• Martin Gutsche · Dorfen, DE

Key dates

• Filing date: Apr 15, 2003
• Grant date: Feb 13, 2007
• Expiry date: Aug 29, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/03
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.