Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
US7189658B2 · kind B2 · utility
3Cited by
20References
20Claims
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Key dates
| Filing date | May 4, 2005 |
| Grant date | Mar 13, 2007 |
| Priority date | — |
| Expiry date | Oct 13, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.